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Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

Bogdan Andrei Bernevig, Taylor L. Hughes, Shou-Cheng Zhang

Science · 2006 · 7,113 citationsOpen access

doi.org/10.1126/science.1133734Free full text

Abstract

We show that the quantum spin Hall (QSH) effect, a state of matter with topological properties distinct from those of conventional insulators, can be realized in mercury telluride-cadmium telluride semiconductor quantum wells. When the thickness of the quantum well is varied, the electronic state changes from a normal to an "inverted" type at a critical thickness d(c). We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss methods for experimental detection of the QSH effect.

Cite this paper

Bernevig, B. A., Hughes, T. L., & Zhang, S.-C. (2006). Quantum spin hall effect and topological phase transition in HgTe quantum wells. Science, 314(5806), 1757–1761. https://doi.org/10.1126/science.1133734

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