Electronic Confinement and Coherence in Patterned Epitaxial Graphene
Claire Berger, Zhimin Song, Xuebin Li, Xiaosong Wu, Nate Brown, Cécile Naud, Didier Mayou, Tianbo Li, Joanna Hass, Alexei N. Marchenkov, Phillip N. First, Walt A. de Heer
Science · 2006 · 5,557 citations
Abstract
Ultrathin epitaxial graphite was grown on single-crystal silicon carbide by vacuum graphitization. The material can be patterned using standard nanolithography methods. The transport properties, which are closely related to those of carbon nanotubes, are dominated by the single epitaxial graphene layer at the silicon carbide interface and reveal the Dirac nature of the charge carriers. Patterned structures show quantum confinement of electrons and phase coherence lengths beyond 1 micrometer at 4 kelvin, with mobilities exceeding 2.5 square meters per volt-second. All-graphene electronically coherent devices and device architectures are envisaged.
Cite this paper
Berger, C., Song, Z., Li, X., Wu, X., Brown, N., Naud, C., Mayou, D., Li, T., Hass, J., Marchenkov, A. N., Conrad, E. H., First, P. N., & Heer, W. A. de. (2006). Electronic confinement and coherence in patterned epitaxial graphene. Science, 312(5777), 1191–1196. https://doi.org/10.1126/science.1125925
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